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January 2001
FDC640P
P-Channel 2.5V PowerTrench ? Specified MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
? –4.5 A, –20 V
R DS(ON) = 0.053 ? @ V GS = –4.5 V
R DS(ON) = 0.080 ? @ V GS = –2.5 V
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
? Battery management
? Load switch
? Battery protection
? Rugged gate rating ( ± 12V)
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
D
D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–20
± 12
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–4.5
A
– Pulsed
–20
P D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.640
Device
FDC640P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2001 Fairchild Semiconductor International
FDC640P Rev E(W)
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